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參數(shù)資料
| 型號： | FDS8962C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Power Trench |
| 中文描述： | 7 A, 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 185K |
| 代理商： | FDS8962C |
FDS8962C Rev A (W)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V,
I
GSSR
Gate-Body Leakage, Reverse V
GS
= -20 V,
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= -250 μA, Referenced to 25
°
C
V
DS
= 24 V,
V
DS
= -24 V,
V
DS
= 0 V
I
D
= 250
μ
A
I
D
= -250
μ
A
Q1
Q2
Q1
Q2
Q1
Q2
All
All
30
-30
V
Breakdown Voltage
25
-23
mV/
°
C
μ
A
V
GS
= 0 V
V
GS
= 0 V
1
-1
100
-100
nA
nA
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= -250 μA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 10 V, I
D
= 7 A, T
= 125
°
C
V
GS
= 4.5 V,
V
GS
= -10 V,
V
GS
= -10 V, I
D
= -5 A, T
J
= 125
°
C
V
GS
= -4.5 V,
V
GS
= 10 V,
V
GS
= -10 V,
V
DS
= 5 V,
V
DS
= -5 V,
I
D
= 250
μ
A
I
D
= -250 μA
Q1
Q2
Q1
Q2
Q1
1
-1
1.9
-1.7
-4.5
4.5
21
29
26
42
57
65
3
-3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
I
D
= 7 A
I
D
= 6 A
I
D
= -5 A
30
46
44
52
78
80
I
D
= -4 A
V
DS
= 5 V
V
DS
= -5 V
I
D
= 7 A
I
D
=-5 A
Q2
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
20
-20
A
S
g
FS
Forward Transconductance
25
10
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
575
528
145
132
65
70
2.1
6.0
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= -15 V, V
GS
= 0 V, f = 1.0 MHz
V
GS
= 15 mV,
f = 1.0 MHz
R
G
Gate Resistance
F
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