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參數(shù)資料
| 型號： | FDS8960C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 35 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | FDS8960C |
FDS8960C Rev C(W)
www.fairchildsemi.com
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V,
I
GSSR
Gate-Body Leakage, Reverse V
GS
= –20 V,
I
GSSR
Gate-Body Leakage, Forward V
GS
= 25 V,
I
GSSF
Gate-Body Leakage, Reverse V
GS
= –25 V,
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 28 V,
V
DS
= –28 V,
I
D
= 250
μ
A
I
D
= –250
μ
A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
35
–35
V
Breakdown Voltage
31
–40
mV/
°
C
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
–1
100
–100
100
–100
μ
A
nA
nA
nA
nA
Q2
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 7 A, T
J
= 125
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –5 A, T
J
= 125
°
C
V
DS
= 5 V,
V
DS
= –5 V,
I
D
= 250
μ
A
I
D
= –250 μA
Q1
Q2
Q1
Q2
Q1
1
–1
2
–1.8
–5
4
20
25
29
44
70
61
23
9
3
–3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
I
D
= 7 A
I
= 6 A
24
32
37
53
87
79
m
I
D
= –5 A
I
D
= –4 A
Q2
g
FS
Forward Transconductance
I
D
= 7 A
I
D
=–5 A
Q1
Q2
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
570
540
126
113
52
60
2
6
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= –15 V, V
GS
= 0 V, f = 1.0 MHz
pF
R
G
Gate Resistance
f = 1.0 MHz
F
N
ò
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