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參數(shù)資料
| 型號： | FDS8960C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel PowerTrench MOSFET |
| 中文描述： | 7 A, 35 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 175K |
| 代理商： | FDS8960C |
August 2005
2005 Fairchild Semiconductor Corporation
FDS8960C Rev C(W)
www.fairchildsemi.com
FDS8960C
Dual
N & P-Channel PowerTrench
ò
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1
:
N-Channel
7.0A, 35V
R
DS(on)
= 0.024
@ V
GS
= 10V
R
DS(on)
= 0.032
@ V
GS
= 4.5V
Q2
:
P-Channel
–5A, –35V
R
DS(on)
= 0.053
@ V
GS
= –10V
R
DS(on)
= 0.087
@ V
GS
= –4.5V
Fast switching speed
RoHS compliant
S
D
SO-8
D
D
D1
D1
D2D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
- Continuous
- Pulsed
P
D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Q1
35
±
20
7
20
Q2
–35
±
25
–5
–20
Units
V
V
A
(Note 1a)
2
W
(Note 1a)
(Note 1b)
1.6
1
0.9
(Note 1c)
T
J
, T
STG
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Operating and Storage Junction Temperature Range
–55 to +150
°
C
(Note 1a)
78
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDS8960C
FDS8960C
Reel Size
13”
Tape width
12mm
Quantity
2500 units
F
N
ò
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS8960C_0511 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench㈢ MOSFET |
| FDS8962C | 功能描述:MOSFET SO8 DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8978 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS8978_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDS8978_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET |
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