參數(shù)資料
型號: FDS8958A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述: 7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SO-8, 8 PIN
文件頁數(shù): 6/11頁
文件大?。?/td> 285K
代理商: FDS8958A
FDS8958A Rev D(W)
Typical Characteristics Q2
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -10.0V
-5.0V
-3.0V
-7.0V
-4.0V
-6.0V
-3.5V
0.5
1
1.5
2
2.5
0
6
12
18
24
30
-I
D
, DRAIN CURRENT (A)
V
GS
= -3.5V
-4.5V
-5.0V
-7.0V
-10.0V
-4.0V
-6.0V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -5A
V
GS
= -10V
0
0.05
0.1
0.15
0.2
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
1.5
2.5
3.5
4.5
5.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -10V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS8958A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8
FDS8958A_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N and P-Channel PowerTrench MOSFET
FDS8958A_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrenchO MOSFET
FDS8958A_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench MOSFET
FDS8958A_F085 功能描述:MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube