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參數(shù)資料
| 型號： | FDS6961A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| 中文描述： | 3500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 241K |
| 代理商： | FDS6961A |
Electrical Characteristics
( T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Conditions
Min
Typ
Max
Units
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
25
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μA
T
J
= 55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.8
3
V
Gate Threshold Voltage Temp. Coefficient
-5
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3.5 A
0.076
0.09
T
J
=125°C
0.11
0.155
V
GS
= 4.5 V, I
D
= 2.8 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 15 V, I
D
= 3.5 A
0.107
0.14
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
t
r
Turn - On Rise Time
On-State Drain Current
14
A
Forward Transconductance
6
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
220
pF
50
pF
20
pF
V
DS
= 15 V, I
D
= 1 A
V
GS
= 10 V , R
GEN
=
6
3
6
ns
11
22
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
Turn - Off Delay Time
7
14
ns
Turn - Off Fall Time
3
6
ns
Total Gate Charge
V
DS
= 15 V, I
D
= 3.5 A,
V
GS
= 5 V
2.1
4
nC
Gate-Source Charge
0.8
nC
Gate-Drain Charge
0.7
nC
1.3
A
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.73
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDS6961A Rev.C
c. 135
O
C/W on a minimum
mounting pad.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDS6961A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 30V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes |
| FDS6961A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDS6961A_F011 | 功能描述:MOSFET Dual NCh PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6961A_L99Z | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6961A_Q | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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