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參數(shù)資料
| 型號： | FDS6930B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 5500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 532K |
| 代理商： | FDS6930B |
2
www.fairchildsemi.com
FDS6930B Rev. A
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3. Trr parameter will not be subjected to 100% production testing.
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 250
= 0 V, I
D
= 250
μ
A
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
μ
A, Referenced to 25
°
C
26
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
V
DS
DS
= 24 V, V
= 24 V, V
GS
GS
= 0 V
= 0 V, T
J
= 55
°
C
1
10
μ
A
I
GSS
On Characteristics
Gate–Source Leakage
(Note 2)
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 250
= V
GS
μ
, I
D
= 250
μ
A
1
1.9
3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
A, Referenced to 25
°
C
–4.6
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 10 V, I
D
D
D
= 5.5 A
= 4.8 A
= 5.5 A, T
J
= 125
°
C
31
40
45
38
50
62
m
I
D(on)
g
FS
Dynamic Characteristics
On–State Drain Current
V
GS
= 10 V, V
DS
= 5.5 A
= 5 V
20
A
Forward Transconductance
V
DS
= 5 V, I
D
19
S
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= 15 V, V
GS
= 0 V,
310
412
pF
C
oss
Output Capacitance
90
120
pF
C
rss
Reverse Transfer Capacitance
40
60
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.9
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= 15 V, I
= 10 V, R
D
= 1 A,
GEN
= 6
6
12
ns
t
r
Turn–On Rise Time
6
12
ns
t
d(off)
Turn–Off Delay Time
16
28
ns
t
f
Turn–Off Fall Time
2
4
ns
Q
g
Total Gate Charge
V
V
DS
GS
= 5 V, I
= 5 V
D
= 5.5 A,
2.7
3.8
nC
Q
gs
Gate–Source Charge
1.0
nC
Q
gd
Gate–Drain Charge
0.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 5.5 A, d
= 0 V, I
S
= 1.3 A
(Note 2)
0.8
1.2
V
t
rr
Diode Reverse Recovery Time
(note3)
I
F
iF
/d
t
= 100 A/μs
16
32
nS
Q
rr
Diode Reverse Recovery Charge
6
nC
a) 78°C/W when mounted
on a 0.5 in
pad of 2 oz
copper
b) 125°C/W when
mounted on a 0.02 in
2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
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相關代理商/技術參數(shù) |
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| FDS6930B | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 30V ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, SOIC |
| FDS6930B_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrench?? MOSFET |
| FDS6961 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Logic Level PowerTrenchTM MOSFET |
| FDS6961A | 功能描述:MOSFET SO-8 DUAL N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS6961A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET NN CH 30V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, NN CH, 30V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes |
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