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參數(shù)資料
| 型號(hào)： | FDS6680A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 12500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | FDS6680A |
FDS6680A Rev F1(W)
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
V
GS
= 0 V,
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
25
mV/
°
C
V
DS
= 24 V,
V
DS
= 24 V, V
GS
= 0 V, T
J
=55
°
C
V
GS
=
±
20 V,
V
DS
= 0 V
V
GS
= 0 V
1
10
±
100
μ
A
μ
A
nA
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 12.5 A
V
GS
= 4.5 V,
I
D
= 10.5 A
V
GS
= 10 V, I
D
= 12.5 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 15 V,
I
D
= 12.5 A
I
D
= 250
μ
A
1
2
3
V
Gate Threshold Voltage
–4.9
7.8
9.9
11.0
64
mV/
°
C
m
9.5
13
15
I
D(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
On–State Drain Current
Forward Transconductance
25
A
S
1620
380
160
1.3
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV, f = 1.0 MHz
10
5
27
15
16
5
5.8
19
10
43
27
23
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 12.5 A,
2.1
A
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.73
1.2
V
I
F
= 12.5 A, d
iF
/d
t
= 100 A/μs
28
18
ns
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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