參數(shù)資料
型號(hào): FDS4559
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V Complementary PowerTrench MOSFET
中文描述: 4.5 A, 60 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SO-8, 8 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 147K
代理商: FDS4559
FDS4559 Rev C1(W)
Electrical Characteristics
(continued)
Symbol
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ
Max
Units
Q1
Q2
Q1
Q2
1.3
–1.3
1.2
–1.2
A
V
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
V
GS
= 0 V, I
S
= –1.3 A
(Note 2)
0.8
–0.8
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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