參數(shù)資料
型號: FDS4435
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel Logic Level PowerTrenchTM MOSFET
中文描述: 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 4/8頁
文件大?。?/td> 637K
代理商: FDS4435
F
FDS4435 Rev. D
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS4435 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL
FDS4435 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
FDS4435_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET
FDS4435_NL 功能描述:MOSFET P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS4435A 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube