參數(shù)資料
型號: FDS4410A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Single N-Channel, Logic-Level, PowerTrench MOSFET
中文描述: 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 4/5頁
文件大?。?/td> 112K
代理商: FDS4410A
4
www.fairchildsemi.com
FDS4410A Rev. B
F
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 10 A
V
DS
= 10V
20V
15V
0
400
800
1200
1600
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
10
100
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
100
μ
s
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
SINGLE PULSE
R
JA
= 125
°
C/W
T
A
= 25
°
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125
°
C/W
T
J
- T
A
= P * R
θ
Duty Cycle, D = t
1
/t
2
θ
JA
(t)
P(pk)
t
1
t
2
θ
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