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參數(shù)資料
| 型號(hào)： | FDS4410A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel, Logic-Level, PowerTrench MOSFET |
| 中文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 112K |
| 代理商： | FDS4410A |
2
www.fairchildsemi.com
FDS4410A Rev. B
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1. R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
R
2. Test: Pulse Width < 300μs, Duty Cycle < 2.0%
Symbol
Off Characteristics
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= 250 μA, Referenced to 25
= 0 V, I
D
= 250 μA
30
V
DSS
J
Breakdown Voltage Temperature
Coefficient
I
D
°
C
25
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μ
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55°C
10
I
GSS
On Characteristics
Gate–Body Leakage
V
GS
=
±
20 V, V
DS
= 0 V
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= 250 μA, Referenced to 25
= V
GS
, I
D
= 250 μA
1
1.9
3
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
°
C
–5
mV/
°
C
R
DS(on)
Static Drain–Source On–Resistance
V
V
V
GS
GS
GS
V
GS
V
DS
= 10 V, I
= 4.5 V, I
= 10 V, I
D
D
D
= 10 A
= 9 A
= 10 A, T
J
= 125
°
C
9.8
12.0
13.7
13.5
20
23
m
I
D(on)
g
FS
Dynamic Characteristics
On–State Drain Current
= 10 V, V
DS
= 10 A
= 5 V
50
A
Forward Transconductance
= 5 V, I
D
48
S
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
1205
pF
C
oss
Output Capacitance
290
pF
C
rss
Reverse Transfer Capacitance
115
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
2.4
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
R
DS
GEN
= 15 V, I
= 6
D
= 1 A, V
GS
= 10 V,
9
19
ns
t
r
Turn–On Rise Time
5
10
ns
t
d(off)
Turn–Off Delay Time
28
44
ns
t
f
Turn–Off Fall Time
9
19
ns
Q
g
Total Gate Charge
V
DD
= 15 V, I
D
= 10 A, V
GS
= 5 V
12
16
nC
Q
gs
Gate–Source Charge
3.4
nC
Q
gd
Gate–Drain Charge
4.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 10A, d
= 0 V, I
S
= 2.1 A (Note 2)
0.74
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
iF
/d
t
= 100 A/μs
24
nS
Q
rr
Diode Reverse Recovery Charge
27
nC
a) 50°C/W when mounted on a
1 in
pad of 2 oz copper
b) 125°C/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
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