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參數(shù)資料
| 型號(hào)： | FDS4080N7 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes |
| 中文描述： | 13 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SO-8 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 254K |
| 代理商： | FDS4080N7 |
FDS4080N3 Rev C1 (W)
Typical Characteristics
0
15
30
45
60
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
5.0V
6.0V
V
GS
= 10V
5.5V
7.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
15
30
45
60
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 5.5V
6.0V
7.0V
10V
8.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.7
1
1.3
1.6
1.9
2.2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 13A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
0.03
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
2.5
3.5
4.5
5.5
6.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
=-55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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