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參數資料
| 型號： | FDS4080N7 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes |
| 中文描述： | 13 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SO-8 |
| 文件頁數： | 2/7頁 |
| 文件大小： | 254K |
| 代理商： | FDS4080N7 |
FDS4080N3 Rev C1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
I
AS
Drain-Source Avalanche Current
Single Pulse, V
DD
= 10V, I
D
=13A
200
13
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
40
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
44
mV/
°
C
V
DS
= 32 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= –20 V ,V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
I
D(on)
On–State Drain Current
g
FS
Forward Transconductance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 13 A
V
GS
= 10 V, I
D
= 13 A, T
J
=125
°
C
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 13 A
2
3.9
5
V
Gate Threshold Voltage
–8
mV/
°
C
8.5
12.5
41
10.5
22
m
30
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1750
357
138
pF
pF
pF
V
DS
= 20 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
12
8
29
14
30
9
10
21
17
46
25
40
ns
ns
ns
ns
nC
nC
nC
V
DD
= 20 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 20 V, I
D
= 13 A,
V
GS
= 10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
3.2
A
V
SD
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
0.7
1.2
V
F
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相關代理商/技術參數 |
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| FDS4080N7_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:40V N-Channel FLMP PowerTrench MOSFET |
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