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參數(shù)資料
| 型號： | FDS3672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз |
| 中文描述： | 7.5 A, 100 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 266K |
| 代理商： | FDS3672 |
2003 Fairchild Semiconductor Corporation
FDS3672 Rev. B
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 13mH, I
= 8A.
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
CA
is determined by the user’s board design.
3:
R
θ
JA
is measured with 1.0 in
copper on FR-4 board
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 7.5A, V
GS
= 10V
I
D
= 6.8A, V
GS
= 6V
I
D
= 7.5A, V
GS
= 10V,
T
C
= 150
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.019
0.023
0.023
0.028
-
0.035
0.043
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
2015
285
70
28
4
10
6.8
6
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V
I
D
= 7.5A
I
g
= 1.0mA
37
6
-
-
-
V
DD
= 50V, I
D
= 4A
V
GS
= 10V, R
GS
= 10
-
-
-
-
-
-
-
51
-
-
-
-
96
ns
ns
ns
ns
ns
ns
14
20
37
27
-
V
SD
Source to Drain Diode Voltage
I
SD
= 7.5A
I
SD
= 4A
I
SD
= 7.5A, dI
SD
/dt= 100A/
μ
s
I
SD
= 7.5A, dI
SD
/dt= 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
55
90
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS3672 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 7.5A, SOIC |
| FDS3672_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 7.5A, 22m?? |
| FDS3672_Q | 功能描述:MOSFET 100V 7.5a .22 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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