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參數(shù)資料
| 型號： | FDS3670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK |
| 中文描述： | 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 204K |
| 代理商： | FDS3670 |
FDS3670 Rev B1 (W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 25A
V
DS
= 20V
50V
80V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0
0.001
10
20
30
40
50
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.0001
0.001
0.01
0.1
t , TI ME (s e c)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
S i n g l e P u l s e
D = 0.5
0.1
0.05
0.02
0.01
0.2
D u t y C y c l e, D = t /t
2
R (t) = r(t) * R
R = 125°C/ W
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
F
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