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參數(shù)資料
| 型號： | FDS3670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK |
| 中文描述： | 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 204K |
| 代理商： | FDS3670 |
FDS3670 Rev B1 (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
100
V
Breakdown Voltage Temperature
92
mV/
°
C
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
25
100
μ
A
nA
V
GS
= –20 V
V
DS
= 0 V
–100
nA
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= –250
μ
A,Referenced to 25
°
C
2
2.5
–7.2
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V,
V
GS
= 10 V,
I
D
= 6.3 A
I
D
= 6.3 A
T
J
= 125
°
C
I
D
= 5.7 A
V
DS
= 5 V
I
D
= 6.3 A
V
GS
= 6 V,
V
GS
= 10 V,
V
DS
= 5 V,
0.022
0.039
0.024
0.030
0.060
0.033
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
25
A
S
31
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
2490
265
80
pF
pF
pF
V
DS
= 50 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
16
10
56
25
57
11
15
26
18
84
40
80
ns
ns
ns
ns
nC
nC
nC
V
DD
= 50 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 50 V,
V
GS
= 10 V
I
D
= 25 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.1
1.2
A
V
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.72
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 50 °C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105 °C/W when
mounted on a 0.04
in
pad of 2 oz
copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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