參數(shù)資料
型號(hào): FDS2170N3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 200V N-Channel PowerTrench剖 MOSFET
中文描述: 0.128 ohm, Si, POWER, FET
封裝: FLMP, SO-8
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 201K
代理商: FDS2170N3
FDS2170N3 Rev B1(W)
Typical Characteristics
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
6.0V
7.0V
V
GS
= 10V
6.5V
0.8
1
1.2
1.4
1.6
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 5.5V
6.0V
6.5V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
2.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 3.0A
V
GS
= 10V
0.05
0.1
0.15
0.2
0.25
0.3
0.35
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.5 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
3
4
5
6
7
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 20V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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