參數(shù)資料
型號(hào)： FDR840
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel 2.5V Specified PowerTrench MOSFET
中文描述： P溝道MOSFET的為2.5V指定的PowerTrench
文件頁數(shù)： 1/5頁
文件大?。?/td> 78K
代理商： FDR840
December 2000
2001 Fairchild Semiconductor Corporation
FDR840P Rev C1(W)
FDR840P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
Applications
Power management
Load switch
Battery protection
Features
–10 A, –20 V. R
DS(ON)
= 12 m
@ V
GS
= –4.5 V
R
DS(ON)
= 17.5 m
@ V
GS
= –2.5 V
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
S
D
D
S
D
G
SuperSOT -8
D
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–20
±
12
–10
–50
1.8
1.0
0.9
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
FDR840P
FDR840P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料
PDF描述
FDR840P P-Channel 2.5V Specified PowerTrench MOSFET
FDR842P P-Channel 1.8V Specified PowerTrench MOSFET
FDR844P P-Channel 1.8V Specified PowerTrench MOSFET
FDR8508P Dual P-Channel, Logic Level, PowerTrench⑩ MOSFET
FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDR840P 功能描述:MOSFET SSOT-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR842P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR842P_Q 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR844P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8508P 功能描述:MOSFET SSOT-8 P-CH DUAL 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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