參數(shù)資料
型號(hào)： FDR842P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： P-Channel 1.8V Specified PowerTrench MOSFET
中文描述： 11000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 141K
代理商： FDR842P
December 2001
2001 Fairchild Semiconductor Corporation
FDR842P Rev D (W)
FDR842P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Power management
Load switch
Battery protection
Features
–11 A, –12 V R
DS(ON)
= 9 m
@ V
GS
= –4.5 V
R
DS(ON)
= 12 m
@ V
GS
= –2.5 V
R
DS(ON)
= 16 m
@ V
GS
= –1.8 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D
S
D
D
S
D
G
SuperSOT -8
D
4
5
3
6
2
7
1
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
–12
±
8
–11
–50
1.8
1.0
0.9
–55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
P
D
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
FDR842P
FDR842P
(Note 1a)
70
20
°
C/W
°
C/W
(Note 1)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
相關(guān)PDF資料
PDF描述
FDR844P P-Channel 1.8V Specified PowerTrench MOSFET
FDR8508P Dual P-Channel, Logic Level, PowerTrench⑩ MOSFET
FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application
FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDR842P_Q 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR844P 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8508P 功能描述:MOSFET SSOT-8 P-CH DUAL 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8508P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
FDR8508PQ 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
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