參數(shù)資料
型號(hào): FDR8508P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Dual P-Channel, Logic Level, PowerTrench⑩ MOSFET
中文描述: 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁(yè)數(shù): 1/8頁(yè)
文件大小: 274K
代理商: FDR8508P
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Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDR8508P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-30
±
20
-3
-20
0.8
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
T
J
, T
stg
Power Dissipation
Operating and Storage Junction Temperature Range
W
°
C
-55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
156
40
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
.8508
Device
FDR8508P
Reel Size
13
Tape Width
12mm
Quantity
3000 units
1
5
7
8
2
6
3
4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDR8508P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
FDR8508PQ 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FDR8521L 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR8521L_Q 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDR856P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube