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參數(shù)資料
| 型號： | FDR8321L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 2200PF 630VDC U2J 1210 |
| 中文描述： | 2900 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 222K |
| 代理商： | FDR8321L |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
I
FL
ON CHARACTERISTICS
(Note 3)
Forward Leakage Current
V
IN
= 5 V, V
ON/OFF
= 0 V
1
μA
V
DROP
Conduction Voltage Drop
V
IN
= 5 V, V
ON/OFF
= 3.3 V, I
L
= 2.9 A
V
IN
= 2.5 V, V
ON/OFF
= 3.3 V, I
L
= 2 A
V
GS
= -5 V, I
D
= -2.9 A
0.185
0.2
V
0.18
0.2
R
DS(ON)
Q
2
- Static Drain-Source On-Resistance
0.06
0.07
V
GS
= -2.5 V, I
D
= -2 A
V
DROP
= 0.2 V, V
IN
= 5 V, V
ON/OFF
= 3.3 V
V
DROP
= 0.2 V, V
IN
= 2.5 V, V
ON/OFF
= 3.3 V
0.09
0.105
I
L
Load Current
2.9
A
2
Notes:
1. V
IN
=5V, V
ON/OFF
=8V, V
DROP
=0.2V, T
A
=25
o
C
2.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design. R
θ
JA
typical =156
o
C/W when mounted on a minimum 0.0025 in
2
pad on FR-4.
3. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
FDR8321L Load Switch Application
External Component Recommendation
First select R2, 100 - 1k
, for Slew Rate control.
C1
≤
1000pF can be added in addition to R2 for further In-rush current control.
Then select R1 such that R1/R2 ratio maintains between 10 - 100. R1 is required to turn Q2 off.
For SPICE simulation, users can download a "FDR8321L.MOD" Spice model from Fairchild Web Site at
www.fairchildsemi.com
FDR8321L Rev.C
APPLICATION CIRCUIT
IN
OUT
R1
R2
C1
LOAD
Co
Q2
ON/OFF
Q1
Ci
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDR836P | P-Channel 2.5V Specified MOSFET |
| FDR838P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDR840P | Thermoelectric Cooler Controller |
| FDW2520C | Thermoelectric Cooler Controller |
| FDR840 | P-Channel 2.5V Specified PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 功能描述:MOSFET SSOT-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR840 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDR840P | 功能描述:MOSFET SSOT-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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