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參數(shù)資料
| 型號(hào)： | FDR8321L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | CAP CER 2200PF 630VDC U2J 1210 |
| 中文描述： | 2900 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 222K |
| 代理商： | FDR8321L |
August 2000
FDR8321L
P-Channel MOSFET With Gate Driver For Load Switch Application
General Description
Features
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDR8321L
Units
V
IN
V
ON/OFF
I
L
Input Voltage Range
2.5 - 8
V
On/Off Voltage Range
1.5 - 8
V
Load Current @ V
DROP
= 0.2V - Continuous
(Note 1)
- Pulsed
2.9
A
10
P
D
T
J
,T
STG
Maximum Power Dissipation
(Note 2)
0.8
W
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 2)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 2)
40
°C/W
2000 Fairchild Semiconductor International FDR8321L Rev. C
This device is designed for configuration as a load
switch
and
is
particularly
Management in portable battery powered electronic
equipment. Designed to operate from 2.5V to 8V input
and supply up to 2.9A. The device features a small
N-Channel MOSFET (Q1) together with a large
P-Channel power MOSFET (Q2) in a single
SuperSOT
TM
-8 package.
suited
for
Power
V
DROP
= 0.2V @ V
IN
= 5V, I
L
= 2.9A. R
DS(ON)
= 0.070
V
DROP
= 0.2V @ V
IN
= 2.5V, I
L
= 2A. R
DS(ON)
= 0.105
.
V
Zener protection for ESD ruggedness (>6KV Human
Body Model).
High density cell design for extremely low on-resistance.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SuperSOT -8
pin
1
1
5
7
8
6
4
3
2
Q2
Q1
See Application Circuit
R
2
V
ON/OFF
R
1
,R
2
,C
1
V
OUT,
C
1,
C
O
C
1
,C
O
R
2
V
IN
,R
1
,C
i
V
OUT,
C
1,
C
O
IN
OUT
ON/OFF
EQUIVALENT CIRCUIT
V
DROP
+
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDR836P | P-Channel 2.5V Specified MOSFET |
| FDR838P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDR840P | Thermoelectric Cooler Controller |
| FDW2520C | Thermoelectric Cooler Controller |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 功能描述:MOSFET SSOT-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR840 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
| FDR840P | 功能描述:MOSFET SSOT-8 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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