參數(shù)資料
型號(hào): FDR8308P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: CAP CER 1500PF 630VDC U2J 1210
中文描述: 3200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-8
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 268K
代理商: FDR8308P
FDR8308P Rev.C
0
1
2
3
4
5
0
4
8
12
16
20
-V , DRAIN-SOURCE VOLTAGE (V)
-
D
-2.5V
-2.0V
-1.5V
-3.0V
V = -4.5V
0
5
10
15
20
0.5
1
1.5
2
2.5
- I , DRAIN CURRENT (A)
D
V = -2.0 V
R
D
-2.5V
-4.5V
-3.0V
-3.5V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -4.5V
I = -3.2A
Figure 3. On-Resistance Variation
with Temperature.
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0
3
6
9
12
15
-V , GATE TO SOURCE VOLTAGE (V)
-
V = -5V
D
T =-55°C
125°C
25°C
Figure 5. Transfer Characteristics.
1
2
3
4
5
0
0.05
0.1
0.15
0.2
- V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = -1.6A
T = 125 C
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0.01
0.1
1
15
-V , BODY DIODE FORWARD VOLTAGE (V)
-
25°C
-55°C
V = 0V
S
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDR8308P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
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FDR8321L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application
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