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參數(shù)資料
| 型號(hào)： | FDR8308P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | CAP CER 1500PF 630VDC U2J 1210 |
| 中文描述： | 3200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 268K |
| 代理商： | FDR8308P |
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -50 μA, Referenced to 25
o
C
-20
V
Breakdown Voltage Temp. Coefficient
-16
mV /
o
C
Zero Gate Voltage Drain Current
V
DS
= -16 V, V
GS
= 0 V
-1
μA
T
J
= 55°C
-10
μA
I
GSS
I
GSS
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -50 μA, Referenced to 25
o
C
-0.4
-0.9
-1.5
V
Gate Threshold Voltage Temp.Coefficient
2.5
mV /
o
C
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -3.2 A
0.038
0.05
T
J
= 125°C
0.053
0.075
V
GS
= -2.5 V, I
D
= -2.7 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -4.5 V, I
D
= -3.2 A
0.054
0.07
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-20
A
Forward Transconductance
13
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1240
pF
Output Capacitance
270
pF
Reverse Transfer Capacitance
100
pF
t
D(on)
t
r
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
8
16
ns
Turn - On Rise Time
15
27
ns
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - Off Delay Time
45
65
ns
Turn - Off Fall Time
30
50
ns
Total Gate Charge
V
DS
= -10 V, I
D
= -4.5 A,
V
GS
= -4.5 V
13
19
nC
Gate-Source Charge
1.8
nC
Gate-Drain Charge
3
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-0.67
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.67 A
(Note 2)
-0.7
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed
by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDR8308P Rev.C
156
O
C/W on a 0.0025 in
2
pad of 2oz copper.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDR8308P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| FDR8309P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR8321L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel MOSFET With Gate Driver For Load Switch Application |
| FDR836P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR838P | 功能描述:MOSFET SSOT-8 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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