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參數(shù)資料
| 型號： | FDPF2710T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 25 A, 250 V, 0.0425 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220F, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 503K |
| 代理商： | FDPF2710T |
3
www.fairchildsemi.com
FDPF2710T Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
9000
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
0.1
1
10
1
10
100
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
I
D
,
V
DS
,Drain-Source Voltage[V]
4
6
8
10
1
10
100
-55
o
C
150
o
C
* Notes :
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
250
0
25
50
75
100
125
150
0.02
0.03
0.04
0.05
0.06
0.07
* Note : T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
[
]
,
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
T
A
= 150
o
C
I
S
,
V
SD
, Body Diode Forward Voltage [V]
T
A
= 25
o
C
150
* Notes :
1. V
GS
=0V
2. 250
μ
s Pulse Test
10
-1
10
0
10
1
0
3000
6000
C
oss
C
iss
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
30
0
10
20
Q
g
, Total Gate Charge [nC]
30
40
50
60
70
80
0
2
4
6
8
10
* Note : I
D
= 50A
V
DS
= 50V
V
DS
= 125V
V
DS
= 200V
V
G
,
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