參數(shù)資料
型號： FDPF33N25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V N-Channel MOSFET
中文描述： 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 799K
代理商： FDPF33N25
2006 Fairchild Semiconductor Corporation
FDPF33N25 Rev A
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDPF33N25
250V N-Channel MOSFET
Features
20A, 250V, R
DS(on)
= 0.094
Ω
@V
GS
= 10 V
Low gate charge ( typical 36.8 nC)
Low C
rss
( typical 39 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDPF33N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
20
12
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
80
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
918
mJ
Avalanche Current
(Note 1)
20
A
Repetitive Avalanche Energy
(Note 1)
9.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
94
0.76
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
1.32
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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相關代理商/技術參數(shù)
參數(shù)描述
FDPF33N25T 功能描述:MOSFET TBD RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDPF33N25TRDTU 制造商:Fairchild Semiconductor Corporation 功能描述:
FDPF33N25TYDTU 制造商:Fairchild Semiconductor Corporation 功能描述:
FDPF3860T 功能描述:MOSFET 100V 20A 38.2mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDPF3860TYDTU 功能描述:MOSFET Trans N-Ch 100V 20A Rail RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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