參數(shù)資料
型號(hào)： FDPF51N25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： FDPF51N25
中文描述： 28 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 851K
代理商： FDPF51N25
2006 Fairchild Semiconductor Corporation
FDPF51N25 Rev. A
1
www.fairchildsemi.com
F
June 2006
UniFET
TM
FDPF51N25
28A, 250V N-Channel MOSFET
Features
R
DS(on)
= 0.060
Ω
@ V
GS
= 10 V
Low gate charge ( typical 55 nC)
Low C
rss
( typical 63 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistorsare produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDPF51N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
28
16.8
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
112
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1111
mJ
Avalanche Current
(Note 1)
28
A
Repetitive Avalanche Energy
(Note 1)
11.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
117
0.93
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
1.07
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDPF51N25RDTU 制造商:Fairchild Semiconductor Corporation 功能描述:
FDPF51N25YDTU 功能描述:MOSFET 250V 28A N-CH UNIFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDPF52N20T 功能描述:MOSFET 200V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDPF55N06 功能描述:MOSFET 60V 55A N-Chan UniFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDPF5N50 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5A, 1.4ヘ
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