參數(shù)資料
型號(hào)： FDP8876
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 70 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 267K
代理商： FDP8876
F
FDP8876 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
PULSE DURATION=80
μ
S
DUTY CYCLE=0.5%MAX
V
GS
=3V
V
GS
=3.5V
V
GS
=4.5V
V
GS
=10V
I
D
,
V
DS
,DRAIN TO SOURSE VOLTAGE(V)
TC=25oC
Figure 2.
10
20
30
40
50
60
70
80
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
R
D
I
D
,DRAIN CURRENT
3v
3.5v
4v
4.5v
5v
10v
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
On-Resistance Variation with Drain
Current and Gate Voltage
Figure 3.
-80
-40
0
40
80
120
200
0.6
0.8
1.0
1.2
1.4
1.6
T
J
, JUNCTION TEMPERATURE
(
o
C
)
R
D
,
PULSE DURATION=80
μ
S
DUTY CYCLE=0.5%MAX
ID = 40A
VGS = 10V
On Resistance Variation with
Temperature
Figure 4.
3
4
5
6
7
8
9
10
0.006
0.008
0.010
0.012
0.014
0.016
PULSE DURATION=80
μ
S
DUTY CYCLE=0.5%MAX
T
A
= 25
o
C
RD
V
GS
, GATE TO SOURCE VOLTAGE (V)
ID=40A
T
A
= 125
o
C
On-Resistance Variation with
Gate-to-Source Votlage
Figure 5. Transfer Characteristics
I
D
,
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
40
80
120
160
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
-25
o
C
25
o
C
IS
VSD, BODY DIODE FORWARD VOLTAGE (V)
125
o
C
V
GS
=0V
Body Diode Forward Voltage Variation
With Source Current and Temperature
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