參數(shù)資料
型號: FDP8878
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm
中文描述: 40 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/6頁
文件大小: 201K
代理商: FDP8878
November 2005
F
2005 Fairchild Semiconductor Corporation
FDP8878 Rev. A
www.fairchildsemi.com
1
FDP8878
N-Channel Logic Level PowerTrench
MOSFET
30V, 40A, 15m
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 15m
, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 19m
, V
GS
= 4.5V, I
D
= 36A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
G
D
D
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Pulsed (Note 4)
I
D
40
A
36
141
60
22
40.5
A
A
E
AS
Single Pulse Avalanche Energy (Note 1)
L = 1mH, I
AS
= 11A
L = 43
μ
H,I
AS
= 32A
mJ
P
D
T
J
, T
STG
Power dissipation
Operating and Storage Temperature
W
o
C
-55 to 175
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
3.7
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
43
Device Marking
FDP8878
Device
FDP8878
Package
TO-220
Reel Size
Tube
Tape Width
n/a
Quantity
45 units
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