參數(shù)資料
型號(hào)： FDP8860
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 80 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 4/6頁(yè)
文件大?。?/td> 285K
代理商： FDP8860
F
M
FDP8860 Rev.B
www.fairchildsemi.com
4
Figure 7.
0
40
Q
g
, GATE CHARGE(nC)
80
120
160
0
2
4
6
8
10
V
DD
= 18V
V
DD
= 12V
V
G
,
V
DD
= 15V
Gate Charge Characteristics
Figure 8.
0.1
1
10
1000
10000
20000
500
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
40
Capacitance vs Drain
to Source Voltage
Figure 9.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
1
10
100
T
J
= 25
o
C
T
J
= 175
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
A
,
(
A
)
200
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
175
0
40
80
120
160
200
240
280
R
θ
JC
= 0.59
o
C/W
V
GS
=4.5V
V
GS
=10V
I
D
,
T
C
, CASE TEMPERATURE
(
o
C
)
Maximum Continuous Drain
Limited by Package
Figure 11. Forward Bias Safe
Operating Area
1
10
0.1
1
10
100
1000
2000
LIMITED BY
PACKAGE
10us
DC
10ms
1ms
100us
D
,
V
DS
, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
TC = 25
O
C
50
Figure 12.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
----------------------
T
C
–
125
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
相關(guān)PDF資料
PDF描述
FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mз
FDP8874 N-Channel PowerTrench MOSFET
FDP8874_NL N-Channel PowerTrench MOSFET
FDP8876 N-Channel PowerTrench MOSFET
FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP8870 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8870_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDP8870_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW
FDP8870_F085 功能描述:MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8874 功能描述:MOSFET 30V 114A 5.3 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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