參數(shù)資料
型號： FDP8860
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET
中文描述： 80 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 285K
代理商： FDP8860
tm
September 2006
F
M
2006 Fairchild Semiconductor Corporation
FDP8860 Rev.B
www.fairchildsemi.com
1
FDP8860
N-Channel PowerTrench
MOSFET
30V, 80A, 2.5m
Features
Max r
DS(on)
= 2.5m
at V
GS
= 10V, I
D
= 80A
Max r
DS(on)
= 2.9m
at V
GS
= 4.5V, I
D
= 80A
Low Miller Charge
Low Q
rr
Body Diode
UIL Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r
DS(on)
and fast
switching speed.
Application
DC - DC
Conversion
Start / Alternator Sytems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
80
219
556
673
254
-55 to +175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
-Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Operating and Storage Temperature
I
D
A
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case TO220
0.59
°C/W
Thermal Resistance, Junction to Ambient TO220
62
Device Marking
FDP8860
Device
FDP8860
Package
TO220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
S
GD
TO-220
FDP Series
S
D
G
相關(guān)PDF資料
PDF描述
FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mз
FDP8874 N-Channel PowerTrench MOSFET
FDP8874_NL N-Channel PowerTrench MOSFET
FDP8876 N-Channel PowerTrench MOSFET
FDP8878 N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP8870 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8870_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDP8870_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 156A, 4.1mW
FDP8870_F085 功能描述:MOSFET 30V/156A/4.1Mohm/NCH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8874 功能描述:MOSFET 30V 114A 5.3 OHM N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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