參數(shù)資料
型號(hào): FDP8030L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET
中文描述: 80 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 358K
代理商: FDP8030L
FDP8030L Rev C(W)
Typical Characteristics
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
0
20
40
60
80
100
I
3.5V
2.5V
4.5V
D
3.0V
0
20
40
I , DRAIN CURRENT (A)
60
80
100
120
0.5
1
1.5
2
2.5
3
D
V = 2.5V
10V
3.5V
4.5V
6.0V
3.0V
R
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 10V
GS
I = 80A
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
2
3
4
5
6
7
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 40A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
2
3
4
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 10V
T = -55°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
60
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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