參數(shù)資料
型號(hào)： FDP6035L
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 58 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 413K
代理商： FDP6035L
April 1998
FDP6035L/FDB6035L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
FDP6035L
FDB6035L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current - Continuous
58
A
- Pulsed
175
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
75
W
Derate above 25
°
C
0.5
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
J A
Thermal Resistance, Junction-to-Case
2
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP6035L Rev.B
58 A, 30 V. R
DS(ON)
= 0.011
@ V
GS
=10 V
R
DS(ON)
= 0.019
@ V
GS
=4.5 V
.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
S
D
G
1998 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
FDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管)
FDP603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管)
FDB6644 30V N-Channel PowerTrench MOSFET
FDP6644 30V N-Channel PowerTrench MOSFET
FDB6670AS 30V N-Channel PowerTrench SyncFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP603AL 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP61N20 功能描述:MOSFET 200V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP61N20 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:MOSFET
FDP65N06 功能描述:MOSFET 60V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP6644 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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