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參數(shù)資料
| 型號： | FDP4030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | FDP4030L |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
OFF CHARACTERISTICS
W
DSS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 7 A
50
mJ
I
AR
BV
DSS
BV
DSS
/
T
J
I
DSS
Maximum Drain-Source Avalanche Current
7
A
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
33
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
1
1.6
2
V
Gate Threshold Voltage Temp. Coefficient
-4.1
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 10 A
0.025
0.035
T
J
= 125°C
0.048
0.06
V
GS
= 10 V, I
D
= 4.5 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 10 A
0.046
0.055
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
30
A
Forward Transconductance
11
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
365
pF
210
pF
70
pF
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 10 A,
V
GS
= 10 V, R
GEN
= 10
8
15
nS
t
r
t
D(off)
Turn - On Rise Time
8
15
nS
Turn - Off Delay Time
20
40
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
10
20
nS
Total Gate Charge
V
= 24 V
I
D
= 10 A, V
GS
= 10 V
13
18
nC
Gate-Source Charge
2
nC
Gate-Drain Charge
4
nC
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
20
A
Maximum Pulsed Drain-Source Diode Forward Current
60
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 10 A
(Note 1)
1.12
1.3
V
T
J
= 125°C
1.08
1.2
Note:
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
FDP4030L Rev.B1
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