參數(shù)資料
型號(hào): FDP2532
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 8 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 8/11頁
文件大?。?/td> 275K
代理商: FDP2532
2002 Fairchild Semiconductor Corporation
FDB2532 / FDP2532 / FDI2532 Rev. B
F
PSPICE Electrical Model
.SUBCKT FDB2532 2 1 3 ;
CA 12 8 1.4e-9
CB 15 14 1.6e-9
CIN 6 8 5.61e-9
rev April 2002
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 159
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 9.56e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 7.71e-9
RLgate 1 9 95.6
RLdrain 2 5 10
RLsource 3 7 77.1
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 9.6e-3
Rgate 9 20 1.01
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1.0e3
Rsource 8 7 RsourceMOD 3.0e-3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*190),3))}
.MODEL DbodyMOD D (IS=6.0E-11 N=1.09 RS=2.3e-3 TRS1=3.0e-3 TRS2=1.0e-6
+ CJO=3.9e-9 M=0.65 TT=4.8e-8 XTI=4.2)
.MODEL DbreakMOD D (RS=0.17 TRS1=3.0e-3 TRS2=-8.9e-6)
.MODEL DplcapMOD D (CJO=1.0e-9 IS=1.0e-30 N=10 M=0.6)
.MODEL MmedMOD NMOS (VTO=3.55 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.01)
.MODEL MstroMOD NMOS (VTO=4.2 KP=145 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.9 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=10.1 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-9.0e-7)
.MODEL RdrainMOD RES (TC1=9.0e-3 TC2=3.5e-5)
.MODEL RSLCMOD RES (TC1=3.4e-3 TC2=1.5e-6)
.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-4.1e-3 TC2=-1.4e-5)
.MODEL RvtempMOD RES (TC1=-4.0e-3 TC2=3.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.0 VOFF=-4.0)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.0 VOFF=-6.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.4 VOFF=1.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.0 VOFF=-1.4)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
相關(guān)PDF資料
PDF描述
FDI33N25 250V N-Channel MOSFET
FDI33N25TU 250V N-Channel MOSFET
FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mз
FDP3652 CAP CER .39UF 50V 10% X7R 1206
FDB3652 N-Channel PowerTrench MOSFET 100V, 61A, 16mз
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDP2532_Q 功能描述:MOSFET 150V NCh UltraFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP2552 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP2552_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 37A, 36m??
FDP2552_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
FDP2552_Q 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube