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參數(shù)資料
| 型號(hào)： | FDP14AN06LA |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз |
| 中文描述： | N溝道的PowerTrench MOSFET的60V的第60A條，14.6mз |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 250K |
| 代理商： | FDP14AN06LA |
2004 Fairchild Semiconductor Corporation
January 2004
FDB14AN06LA0 / FDP14AN06LA0
Rev. B
F
FDB14AN06LA0 / FDP14AN06LA0
N-Channel PowerTrench
MOSFET
60V, 60A, 14.6m
Features
r
DS(ON)
= 12.8m
(Typ.), V
GS
= 5V, I
D
= 60A
Q
g
(tot) = 24nC (Typ.), V
GS
= 5V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 83557
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 5V)
Continuous (T
A
= 25
o
C, V
GS
= 5V, R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
67
60
10
A
A
A
A
Figure 4
46
125
0.83
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.2
62
43
o
C/W
o
C/W
o
C/W
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDP14AN06LA0 | 功能描述:MOSFET 60V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP14AN06LA0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDP14AN06LA0_Q | 功能描述:MOSFET Single N-Ch 60V Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP14G | 制造商:ADAM-TECH 制造商全稱(chēng):Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP14N30 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:300V N-Channel MOSFET |
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