參數(shù)資料
型號: FDP038AN06A0
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET 60V, 80A, 3.8mз
中文描述: 17 A, 60 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 280K
代理商: FDP038AN06A0
2002 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. A1
F
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
10
100
2000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
0.01
10
100
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
40
80
120
160
3.0
3.5
4.0
4.5
5.0
5.5
6
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 175
o
C
0
40
80
120
160
0
0.5
1.0
1.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
V
GS
= 6V
3
4
5
0
20
40
60
80
6
I
D
, DRAIN CURRENT (A)
D
)
V
GS
= 6V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
200
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