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參數(shù)資料
| 型號： | FDP038AN06A0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 80A, 3.8mз |
| 中文描述： | 17 A, 60 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 280K |
| 代理商： | FDP038AN06A0 |
2002 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain
“
Miller
”
Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 0.255mH, I
AS
= 70A.
2:
Pulse Width = 100s
Device Marking
FDP038AN06A0
FDI038AN06A0
Device
Package
TO-220AB
TO-262AB
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
FDP038AN06A0
FDI038AN06A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 40A, V
GS
= 6V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0035 0.0038
0.0049 0.0074
-
0.0071 0.0078
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
6400
1123
367
95
12
30
18
24
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 80A
I
g
= 1.0mA
124
15
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 80A
V
GS
= 10V, R
GS
= 2.4
-
-
-
-
-
-
-
163
-
-
-
-
75
ns
ns
ns
ns
ns
ns
15
93
38
13
-
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
38
39
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FDP038AN06A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDP038AN06A0_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 60V, 80A, 3.8mз |
| FDP038AN06A0_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 80A, 3.8m?? |
| FDP038AN06A0_F102 | 制造商:Fairchild 功能描述:60V/80A N-CH MOSFET |
| FDP038AN06A0_NL | 制造商:Fairchild 功能描述:60V/80A N-CH MOSFET |
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