參數(shù)資料
型號(hào)： FDN372S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 30V N-Channel PowerTrench剖 SyncFET
中文描述： 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-3
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 142K
代理商： FDN372S
September 2002
2002 Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S
30V N
-
Channel PowerTrench
SyncFET
General Description
The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Applications
DC-DC Converter
Motor Drives
Features
2.6 A, 30 V.
R
DS(ON)
= 40 m
@ V
GS
= 10 V
R
DS(ON)
= 50 m
@ V
GS
= 4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
2.6
10
0.5
0.46
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
372
FDN372S
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
D
S
G
F
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDN372S_F095 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET
FDN372S_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN537N 功能描述:MOSFET 30V Single N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN5618 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET
FDN5618P 功能描述:MOSFET SSOT-3 P-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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