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參數(shù)資料
| 型號： | FDN361BN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| 中文描述： | 1400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 103K |
| 代理商： | FDN361BN |
FDN361BN Rev A(W)
www.fairchildsemi.com
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
Δ
BV
DSS
Δ
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
V
GS
= 0 V,
I
D
= 250
μ
A,Referenced to 25
°
C
V
DS
= 24 V,
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55
°
C
V
GS
=
±
20 V,
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
26
mV/
°
C
μ
A
μ
A
nA
V
GS
= 0 V
1
10
±
100
V
DS
= 0 V
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 1.4 A, T
J
= 125
°
C
V
GS
= 4.5 V,
V
DS
= 5 V,
I
D
= 250
μ
A
I
D
= 1.4 A
I
D
= 1.2 A
1
2.1
92
120
114
4
3
V
m
Ω
110
160
150
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 1.4 A
3.5
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
145
35
15
1.6
193
47
23
pF
pF
pF
Ω
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
3
8
16
2
1.3
0.5
0.5
6
16
29
4
1.8
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
DS
= 15 V,
V
GS
= 4.5 V
I
D
= 1.4 A,
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
t
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= 0.42 A
(Note 2)
0.8
1.2
V
I
F
= 1.4 A,
d
iF
/d
t
= 100 A/μs
11
4
22
nS
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 250
°
C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN363N | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN371N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN372S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN372S_F095 | 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET |
| FDN372S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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