參數(shù)資料
型號: FDN360P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Single P-Channel PowerTrenchTM MOSFET
中文描述: 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-3
文件頁數(shù): 4/8頁
文件大?。?/td> 231K
代理商: FDN360P
F
FDN360P Rev. D
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= -2.0A
V
DS
= -5.0V
-10V
-15V
0
120
240
360
480
600
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f=1MHz
V
GS
= 0V
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
R
DS(ON)
Limit
DC10s
1s
100ms
10ms
1ms
100
μ
s
V
GS
= -10V
SINGLE PULSE
R
θ
JC
=270
o
C/W
T
A
=25
o
C
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相關代理商/技術參數(shù)
參數(shù)描述
FDN360P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
FDN360P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDN360P Series 30 V 80 mOhm Single P-Channel PowerTrench Mosfet - SSOT-3
FDN361 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchビヌ
FDN361AN 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDN361AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23