參數(shù)資料
型號(hào)： FDMS8670S_07
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз
中文描述： N溝道的PowerTrench㈢式SyncFET商標(biāo)30V的，42A條，3.5mз
文件頁數(shù)： 3/8頁
文件大小： 238K
代理商： FDMS8670S_07
F
S
T
FDMS8670S Rev.C3
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
30
60
90
120
150
180
V
GS
=
4V
V
GS
=
4.5V
V
GS
=
3V
V
GS
=
3.5V
V
GS
=
10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
I
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
30
60
90
120
150
180
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 3V
V
GS
= 10V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 20A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
3
4
5
6
7
8
9
10
2
4
6
8
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 20A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
0
30
60
90
120
150
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
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