參數(shù)資料
型號： FDI12N50TU
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel MOSFET 500V, 11.5A, 0.65ヘ
中文描述： 11.5 A, 500 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, I2PAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 311K
代理商： FDI12N50TU
F
FDB12N50
TM
Rev. A
1
www.fairchildsemi.com
2
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
FDB12N50
FDI12N50
Device
FDB12N50TM
FDI12N50TU
Package
D
2
-PAK
I
2
-PAK
Reel Size
330mm
-
Tape Width
24mm
-
Quantity
800
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Δ
BV
DSS
/
Δ
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V, T
J
= 25
o
C
500
-
-
V
I
D
= 250
μ
A, Referenced to 25
o
C
-
0.66
-
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
-
-
-
-
-
-
1
μ
A
10
±100
I
GSS
Gate to Body Leakage Current
nA
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 6A
V
DS
= 25V, I
D
= 6A
(Note 4)
3.0
-
-
-
5.0
0.65
-
V
Ω
S
0.55
11
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
985
140
12
22
6
1315
190
17
30
-
pF
pF
pF
nC
nC
V
DS
= 400V, I
D
= 11.5A
V
GS
= 10V
(Note 4, 5)
Gate to Drain “Miller” Charge
-
10
-
nC
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 11.5A
R
G
= 25
Ω
(Note 4, 5)
-
-
-
-
25
60
45
35
60
130
105
85
ns
ns
ns
ns
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-
-
-
-
-
11.5
46
1.4
-
-
A
A
V
ns
μ
C
V
GS
= 0V, I
SD
= 11.5A
V
GS
= 0V, I
SD
= 11.5A
dI
F
/dt = 100A/
μ
s
(Note 4)
370
3.8
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, I
AS
= 11.5A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25
°
C
3. I
SD
≤
11.5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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