參數(shù)資料
型號(hào): FDG6308
廠商: Fairchild Semiconductor Corporation
英文描述: P-Channel 1.8V Specified PowerTrench MOSFET
中文描述: P溝道MOSFET的1.8指定的PowerTrench
文件頁數(shù): 3/5頁
文件大小: 85K
代理商: FDG6308
FDG6308P Rev B (W)
Typical Characteristics
0
0.4
0.8
1.2
1.6
2
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-3.5V
-2.5V
-2.0V
V
GS
= -4.5V
-3.0V
-1.8V
0.75
1
1.25
1.5
1.75
2
2.25
2.5
0
0.5
1
1.5
2
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= -1.8V
-2.5V
-3.5V
-4.5V
-2.0V
-3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -0.6A
V
GS
= -4.5V
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -0.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
相關(guān)PDF資料
PDF描述
FDG6308P CAP CER 68000PF 250V X7R 1206
FDG6313N Dual N-Channel, Digital FET
FDG6316 P-Channel 1.8V Specified PowerTrench MOSFET
FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET
FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6308P 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6308P_Q 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6313 制造商:Rochester Electronics LLC 功能描述:- Bulk
FDG6313N 功能描述:MOSFET 25V Dual N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6313N_NL 功能描述:MOSFET 25V Dual N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube