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參數(shù)資料
| 型號(hào)： | FDG6308 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的1.8指定的PowerTrench |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 85K |
| 代理商： | FDG6308 |
FDG6308P Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A
–20
V
BV
DSS
===
T
J
I
DSS
I
GSSF
I
GSSR
I
D
= –250
μ
A, Referenced to 25
°
C
–15
mV/
°
C
V
DS
= –16 V, V
GS
= 0 V
V
GS
= –8 V,
V
GS
= 8 V,
–1
–100
100
μ
A
nA
nA
V
DS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
V
GS(th)
===
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–0.4
–0.9
2
–1.5
V
mV/
°
C
V
GS
= –4.5 V, I
D
= –0.6 A
V
GS
= –2.5 V, I
D
= –0.5 A
V
GS
= –1.8 V, I
D
= –0.4 A
V
GS
= –4.5 V, I
D
= –0.6 A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –0.6 A
0.27
0.36
0.55
0.35
0.40
0.55
0.80
0.56
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–2
A
S
2.1
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
153
25
9
pF
pF
pF
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
5
10
27
14
3.2
2.5
ns
ns
ns
ns
nC
nC
nC
15
7
1.6
1.8
0.3
0.4
V
DD
= –10 V, I
D
= 1 A,
V
GS
= –4.5 V, R
GEN
= 6
V
DS
= –10 V, I
D
= –0.6 A,
V
GS
= –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.25
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.25 A
(Note 2)
–0.77
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design. R
θ
JA
= 415°C/W when mounted on a minimum pad .
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù) |
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| FDG6308P | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6308P_Q | 功能描述:MOSFET Dual P-Ch 1.8V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6313 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDG6313N | 功能描述:MOSFET 25V Dual N-Ch Digital RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6313N_NL | 功能描述:MOSFET 25V Dual N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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