參數(shù)資料
型號(hào): FDFS6N303
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel MOSFET with Schottky Diode
中文描述: 6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 1/5頁
文件大?。?/td> 96K
代理商: FDFS6N303
October 2001
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
MOSFET Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDFS6N303
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
6
A
- Pulsed
30
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1c)
0.9
T
J
,T
STG
Schottky Diode Maximum Ratings
T
A
= 25
o
C unless otherwise noted
V
RRM
Repetitive Peak Reverse Voltage
I
O
Average Forward Current
(Note 1a)
Operating and Storage Temperature Range
-55 to 150
°C
30
V
2
A
2001 Fairchild Semiconductor Corporation FDFS6N303 Rev. D1
6 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
= 10 V.
R
DS(ON)
= 0.050
@ V
GS
= 4.5 V.
V
F
< 0.28 V @ 0.1 A
V
F
< 0.42 V @ 3 A
V
F
< 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
Fairchild Semiconductor's FETKEY technology incorporates
a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the
package. The general purpose pinout has been chosen to
maximize flexibility and ease of use. FETKEY products are
particularly suited for switching applications such as DC/DC
buck, boost, synchronous, and non-synchronous converters
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint is
desirable.
A
C
S
A
SO-8
D
D
C
G
pin
1
FDFS
6N303
A
A
C
C
D
D
G
S
6
7
5
1
2
3
4
8
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