參數(shù)資料
型號(hào)： FDFS2P753Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
中文描述： 3 A, 30 V, 0.162 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SO-8
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 341K
代理商： FDFS2P753Z
F
M
FDFS2P753Z Rev.A
www.fairchildsemi.com
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
4
8
12
16
V
GS
=
-4V
V
GS
=
-10V
V
GS
=
-3.5V
V
GS
=
-4.5V
V
GS
=
-5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
I
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
4
8
12
16
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 3.5V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
Normalized On-Resistance
Figure 3. Normalized On-Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -3A
V
GS
= -10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
3
4
5
6
7
8
9
10
50
100
150
200
250
300
350
400
450
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= -3A
r
D
,
S
(
m
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
6
0
4
8
12
16
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
I
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
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