參數(shù)資料
型號(hào)： FDFS2P753Z
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
中文描述： 3 A, 30 V, 0.162 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SO-8
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 341K
代理商： FDFS2P753Z
F
M
FDFS2P753Z Rev.A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= -250
μ
A, V
GS
= 0V
-30
V
I
D
= -250
μ
A, referenced to 25°C
-21
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24V,
V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
-1
μ
A
T
J
= 125°C
-100
±10
I
GSS
Gate to Source Leakage Current
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μ
A
-1
-2.1
-3
V
I
D
= -250
μ
A, referenced to 25°C
5
mV/°C
r
DS(on)
Drain to Source On-Resistance
V
GS
= -10V, I
D
= -3.0A
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -10V, I
D
= -3.0A, T
J
=
125°C
V
DS
= -5V, I
D
= -3.0A
69
115
115
180
m
97
162
g
FS
Forward Transconductance
6
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
340
80
65
18
455
110
100
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(4.5)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at -10V
Total Gate Charge at -4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= -10V, I
D
= -3.0A
V
GS
= -10V, R
GEN
= 6
7
14
50
33
35
9.3
4.6
ns
ns
ns
ns
nC
nC
nC
nC
31
18
20
6.6
3.3
1.3
1.6
V
GS
= 0V to -10V
V
GS
= 0V to -4.5V
V
DD
= -10V
I
D
= -3.0A
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= -2.0A (Note 3)
-0.9
20
14
-1.2
30
21
V
ns
nC
I
F
= -3.0A, di/dt = 100A/
μ
s
Schottky Diode Characteristics
I
R
Reverse Leakage
V
F
= 20V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
190
66
0.5
0.39
0.58
0.53
μ
A
mA
V
F
Forward Voltage
I
F
= 1A
V
I
F
= 2A
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