參數(shù)資料
型號： FDFMA2P857
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm
中文描述： 3 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT, 2 X 2 MM, 0.80 MM HEIGHT, MICROFET-8
文件頁數(shù)： 2/8頁
文件大?。?/td> 366K
代理商： FDFMA2P857
F
FDFMA2P857 Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Δ
BV
DSS
Δ
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= –250
μ
A, V
GS
= 0V
–20
V
I
D
= –250
μ
A, referenced to 25°C
–12
mV/°
C
V
DS
= –16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
–1
±100
μ
A
nA
On Characteristics
V
GS(th)
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250
μ
A
–0.4
–0.7
–1.3
V
I
D
= –250
μ
A, referenced to 25°C
2
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= –4.5V, I
D
= –3.0A
V
GS
= –2.5V, I
D
= –2.5A
V
GS
= –1.8V, I
D
= –1.0A
V
GS
= –4.5V, I
D
= –3.0A, T
J
= 125°C
V
DS
= –5V, I
D
= –3.0A
90
120
172
118
7
120
160
240
160
m
Ω
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= –10V, V
GS
= 0V,
f = 1.0MHz
435
80
45
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= –10V, I
D
= –1A
V
GS
= –4.5V, R
GEN
= 6
Ω
9
11
15
6
4
0.8
0.9
18
19
27
12
6
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10V I
D
= –3.0A
V
GS
= –4.5V
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–1.1
–1.2
A
V
ns
nC
V
GS
= 0V, I
S
= –1.1A (Note 2)
–0.8
17
6
I
F
= –3.0A, di/dt = 100A/
μ
s
Schottky Diode Characteristics
I
R
Reverse Leakage
V
R
= 10V
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
0.5
0.05
0.6
1.1
0.09
0.9
0.37
0.29
0.23
0.5
0.46
0.43
4.5
1.0
8.4
8.0
1.6
10
0.40
0.35
0.29
0.54
0.51
0.48
μ
A
mA
mA
μ
A
mA
mA
V
V
V
V
V
V
I
R
Reverse Leakage
V
R
= 20V
V
F
Forward Voltage
I
F
= 100mA
V
F
Forward Voltage
I
F
= 1A
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDFMA2P857_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
FDFMA2P859T 功能描述:MOSFET PT2 Pch 20V/8V & Schottky Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA3N109 功能描述:MOSFET PowerTrench MOSFET and Schottky Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDFMA3N109_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode
FDFMA3P029Z 功能描述:MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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