參數(shù)資料
型號(hào): FDFMA2P029Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.1A, 95mohm
中文描述: 3100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
封裝: 2 X 2 MM, 0.8 MM HEIGHT, ROHS COMPLIANT, MICROFET-6
文件頁數(shù): 3/8頁
文件大小: 352K
代理商: FDFMA2P029Z
F
M
FDFMA2P029Z Rev.B
www.fairchildsemi.com
3
Notes:
1:
R
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the
user's board design.
(a) MOSFET
R
θ
JA
= 86°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
(b) MOSFET R
θ
JA
= 173°C/W when mounted on a minimum pad of 2 oz copper
(c) Schottky
R
θ
JA
= 86
o
C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
(d) Schottky
R
θ
JA
= 140
o
C/W when mounted on a minimum
pad of 2 oz copper.
2:
Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%
a)86
o
C/W
when mounted
on a 1in
pad of
2 oz copper.
b)173
o
C/W
when mounted
on a minimum
pad of 2 oz
copper.
c)86
o
C/W when
mounted on a
1in
pad of 2 oz
copper.
d)140
o
C/W
when mounted
on a minimum
pad of 2 oz
copper.
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